<p><em>器件采用PowerPAK</em><em>®</em><em><span> </span>1212‑8S封装，导通电阻低至0.95 m</em><em><span>W</span></em><em>，</em><em>优异</em><em>的FOM仅为29.8 m</em><em><span>W</span></em><em>*nC</em></p>
<p><span>日前，</span><span>Vishay Intertechnology, Inc.</span><span>（</span><span>NYSE 股市代号：VSH</span><span>）</span><span>推</span><span><span>出</span></span><span><span>多功能新型</span></span><span><span>30 V n</span></span><span><span>沟道</span></span><span><span>TrenchFET</span></span><span><span>®</span></span><span><span>第五代功率</span></span><span><span>MOSFET</span></span><span><span>---</span></span><a href="http://www.vishay.com/ppg?79977"><span><span>SiSS52DN</span></span></a>…;，提升隔离和非隔离拓扑结构功率密度和能效。</span></span><span><span>Vishay Siliconix<span> </span></span></span><a href="http://www.vishay.com/ppg?79977"><span><span>SiSS52DN</span></span></a>…;采用热增强型</span></span><span><span>3.3 mm<span> </span></span></span><span><span>x</span></span><span><span><span> </span>3.3 mm</span></span><span><span><span> </span></span></span><span><span>PowerPAK</span></span><span><span>®</span></span><span><span> 1212-8S封装，10 V条件下导通电阻仅为</span></span><span><span>0.95 m</span></span><span><span><span>W</span></span></span><span><span>，比上一代产品低</span></span><span><span>5 %</span></span><span><span>。此外，</span></span><span><span><span> </span>4.5 V</span></span><span><span>条件下器件导通电阻为</span></span><span><span>1.5 m</span></span><span><span><span>W</span></span></span><span><span>，而</span></span><span><span>4.5 V</span></span><span><span>条件下导通电阻与栅极电荷乘积，即</span></span><span><span>MOSFET</span></span><span><span>开关应用重要优值系数</span></span><span><span>（</span></span><span><span>FOM</span></span><span><span>）</span></span><span><span>为</span></span><span><span>29.8 m</span></span><span><span><span>W</span></span></span><span><span>*nC</span></span><span><span>，是市场上</span></span><span><span>优值</span></span><span><span>系数最低的产品之一。</span></span></p>
<p><span>SiSS52DN</span><span>的</span><span>FOM</span><span>比上一代器件低</span><span>29 %</span><span>，从而降低导通和开关损耗，节省功率转换应用的能源。</span></p>
<p><span><span>SiSS52DN</span></span><span><span>适用于</span></span><span><span>同步整流、同步降压转换器、DC/DC转换器、开关柜拓扑结构、</span></span><span><span>OR-ring FET</span></span><span><span>低边开关，以及服务器、通信和RF设备电源的负载切换。</span></span><span><span>MOSFET</span></span><span><span>可提高隔离和非隔离拓扑结构的性能，简化设计人员两种电路的器件选择。</span></span></p>
<p><span>器件经过</span><span>100 % R</span><span>G</span><span>和</span><span>UIS</span><span>测试，符合</span><span>RoHS</span><span>标准，无卤素。</span></p>
<p><span>SiSS52DN</span><span>现可提供样品并已实现量产，供货周期为</span><span>12</span><span>周</span><span>。</span></p>
<p><strong>VISHAY简介</strong></p>
<p><span>Vishay 是全球最大的分立半导体和无源电子元件系列产品制造商之一，这些产品对于汽车、工业、计算、消费、通信、国防、航空航天和医疗市场的创新设计至关重要。服务于全球客户，Vishay承载着科技基因——</span><span>The DNA of tech</span><span><span>Ô</span></span><span>。Vishay Intertechnology, Inc. 是在纽约证券交易所上市（VSH）的“财富1,000 强企业”。有关Vishay的详细信息，敬请浏览网站<span> </span></span><a href="http://www.vishay.com/"><span>www.vishay.com</span></a><span>。</span></p>